Very Low Power CMOS SRAM
64K X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BS616LV1010
n
FEATURES
Ÿ
Wide V
CC
operation voltage : 2.4V ~ 5.5V
Ÿ
Very low power consumption :
V
CC
= 3.0V
Operation current : 25mA (Max.) at 55ns
2mA (Max.) at 1MHz
Standby current : 0.02uA (Typ.) at 25
O
C
V
CC
= 5.0V
Operation current : 45mA (Max.) at 55ns
5mA (Max.) at 1MHz
Standby current : 0.4uA (Typ.) at 25
O
C
Ÿ
High speed access time :
-55
55ns(Max.) at V
CC
=2.7~5.5V
-70
70ns(Max.) at V
CC
=2.4~5.5V
Ÿ
Automatic power down when chip is deselected
Ÿ
Easy expansion with CE and OE options
Ÿ
I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ
Three state outputs and TTL compatible
Ÿ
Fully static operation
Ÿ
Data retention supply voltage as low as 1.5V
n
DESCRIPTION
The BS616LV1010 is a high performance, very low power CMOS
Static Random Access Memory organized as 65,536 by 16 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.02uA at 3.0V/25
O
C and maximum access time of 55ns at
2.7V/85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BS616LV1010 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV1010 is available in DICE form, JEDEC standard
44-pin TSOP II and 48-ball BGA package.
n
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BS616LV1010DC
BS616LV1010AC
BS616LV1010EC
BS616LV1010AI
BS616LV1010EI
Industrial
-40
O
C to +85
O
C
5.0uA
1.5uA
5mA
25mA
45mA
2mA
15mA
25mA
Commercial
+0
O
C to +70
O
C
3.0uA
0.5uA
4mA
24mA
44mA
1.5mA
14mA
24mA
OPERATING
TEMPERATURE
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=3.0V
10MHz
f
Max.
V
CC
=5.0V
V
CC
=3.0V
1MHz
V
CC
=5.0V
10MHz
f
Max.
1MHz
DICE
BGA-48-0608
TSOP II-44
BGA-48-0608
TSOP II-44
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PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
VSS
DQ4
DQ5
DQ6
DQ7
WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
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BLOCK DIAGRAM
A8
A13
A15
A14
A12
A7
A6
A5
A4
2048
DQ0
.
.
.
.
.
.
DQ15
16
.
.
.
.
.
.
Data
Input
Buffer
16
128
Column Decoder
7
Control
Address Input Buffer
16
Column I/O
Write Driver
Sense Amp
Address
Input
Buffer
9
Row
Decoder
512 x 2048
512
Memory Array
BS616LV1010EC
BS616LV1010EI
16
1
A
B
C
D
E
F
G
H
LB
D8
D9
VSS
VCC
D14
D15
NC
2
OE
UB
D10
D11
D12
D13
NC
A8
3
A0
A3
A5
NC
NC
A14
A12
A9
4
A1
A4
A6
A7
NC
A15
A13
A10
5
A2
CE
D1
D3
D4
D5
WE
A11
6
NC
D0
D2
VCC
VSS
D6
D7
NC
Data
Output
Buffer
CE
WE
OE
UB
LB
V
CC
V
SS
A11 A9
A3
A2
A1
A0 A10
48-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
R0201-BS616LV1010
1
Revision 2.6
May.
2006
BSI [ BRILLIANCE SEMICONDUCTOR ]
