BSI
ABSOLUTE MAXIMUM RATINGS
(1)
SYMBOL
V
TERM
V
cc
T
BIAS
T
STG
P
T
I
OUT
PARAMETER
Terminal Voltage with
Respect to GND
Power Supply Voltage
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
BS616LV1012
OPERATING RANGE
UNITS
V
V
O
RATING
-0.5 to
Vcc+0.5
-0.5 to
Vcc+0.5
-40 to +85
-60 to +150
1.0
20
RANGE
Commercial
Industrial
AMBIENT
TEMPERATURE
0
O
C to +70
O
C
-40
O
C to +85
O
C
Vcc
2.4V ~ 3.6V
2.4V ~ 3.6V
C
C
O
W
mA
CAPACITANCE
(1)
(TA = 25
o
C, f = 1.0 MHz)
SYMBOL
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
C
IN
C
DQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
MAX.
UNIT
V
IN
=0V
V
I/O
=0V
6
8
pF
pF
1. This parameter is guaranteed and not 100% tested.
DC ELECTRICAL CHARACTERISTICS
( TA = -40
o
C to + 85
o
C )
PARAMETER
NAME
V
IL
V
IH
I
IL
I
LO
V
OL
V
OH
I
CC
(6)
PARAMETER
Guaranteed Input Low
(2)
Voltage
Guaranteed Input High
(3)
Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Standby Current-TTL
TEST CONDITIONS
Vcc=3.0V
MIN. TYP.
-0.5
2.0
--
--
Vcc=3.0V
(1)
MAX.
0.8
Vcc+0.3
1
1
0.4
--
23
18
1
2.5
UNITS
V
V
uA
uA
V
V
mA
mA
uA
--
--
--
--
--
--
--
--
0.4
Vcc=3.0V
Vcc = Max, V
IN
= 0V to Vcc
Vcc = Max, CE = V
IH
, or OE = V
IH
,
V
I/O
= 0V to Vcc
Vcc = Max, I
OL
= 2mA
Vcc = Min, I
OH
= -1mA
CE = V
IL
, I
DQ
= 0mA,
F = Fmax
(4)
--
2.4
--
--
--
Vcc=3.0V
55ns
70ns
Vcc=3.0V
I
CCSB
(5)
CE = V
IH
, I
DQ
= 0mA
CE
≧
Vcc -0.2V,
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
Vcc=3.0V
I
CCSB1
Standby Current-CMOS
Vcc=3.0V
1. Typical characteristics are at TA = 25
o
C.
3. Overshoot : Vcc+1.5V in case of pulse width
≦20ns.
5. I
cc
s
B1_Max.
is 1.3uA at Vcc=3.0V and T
A
=70
o
C.
2. Undershoot : -1.5V in case of pulse width
≦20ns.
4. Fmax = 1/t
RC
.
6. I
cc
_Max.
is 22mA(@55ns) / 17mA(@70ns) at Vcc=3.0V and TA=0~70
o
C.
DATA RETENTION CHARACTERISTICS
( TA = -40
o
C to + 85
o
C )
SYMBOL
V
DR
I
CCDR
t
CDR
t
R
(3)
PARAMETER
Vcc for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
TEST CONDITIONS
CE
≧
Vcc - 0.2V
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
CE
≧
Vcc - 0.2V
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
See Retention Waveform
MIN.
1.5
--
0
T
RC
(2)
TYP.
(1)
--
0.15
--
--
MAX.
--
0.8
--
--
UNITS
V
uA
ns
ns
1. Vcc = 1.5V, T
A
= + 25
O
C
2. t
RC
= Read Cycle Time
3. I
cc
DR_MAX.
is 0.45uA at T
A
=70
O
C.
R0201-BS616LV1012
3
Revision 1.0
Apr.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
