Very Low Power CMOS SRAM
1M X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BS616LV1611
n
FEATURES
Ÿ
Wide V
CC
operation voltage : 2.4V ~ 5.5V
Ÿ
Very low power consumption :
V
CC
= 3.0V
Operation current : 46mA (Max.) at 55ns
2mA (Max.) at 1MHz
Standby current :
1.5uA (Typ.) at 25
O
C
V
CC
= 5.0V
Operation current : 115mA (Max.) at 55ns
10mA (Max.) at 1MHz
Standby current :
6.0uA (Typ.) at 25
O
C
Ÿ
High speed access time :
-55
55ns(Max.) at V
CC
=3.0~5.5V
-70
70ns(Max.) at V
CC
=2.7~5.5V
Ÿ
Automatic power down when chip is deselected
Ÿ
Easy expansion with CE2, CE1 and OE options
Ÿ
I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ
Three state outputs and TTL compatible
Ÿ
Fully static operation, no clock, no refresh
Ÿ
Data retention supply voltage as low as 1.5V
n
DESCRIPTION
The BS616LV1611 is a high performance, very low power CMOS
Static Random Access Memory organized as 1,048,576 by 16 bits
and operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 1.5uA at 3.0V/25
O
C and maximum access time of 55ns at
3.0V/85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE1), active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BS616LV1611 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV1611 is available in 48-pin TSOP Type I package and
48-ball BGA package.
n
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BS616LV1611FC
BS616LV1611TC
BS616LV1611FI
BS616LV1611TI
OPERATING
TEMPERATURE
Commercial
+0
O
C to +70
O
C
Industrial
-40
O
C to +85
O
C
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=3.0V
10MHz
f
Max.
V
CC
=5.0V
V
CC
=3.0V
1MHz
V
CC
=5.0V
10MHz
f
Max.
1MHz
50uA
8.0uA
9mA
48mA
113mA
1.5mA
19mA
45mA
BGA-48-0912
TSOP I-48
100uA
16uA
10mA
50mA
115mA
2mA
20mA
46mA
BGA-48-0912
TSOP I-48
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PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE1
DQ0
DQ1
DQ2
DQ3
VCC
NC
VSS
DQ4
DQ5
DQ6
DQ7
A19
WE
A18
A17
A16
A15
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A5
A6
A7
OE
UB
LB
CE2
NC
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
A8
A9
A10
A11
A12
A13
n
BLOCK DIAGRAM
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
1024 x 16384
BS616LV1611TC
BS616LV1611TI
16384
DQ0
.
.
.
.
.
.
DQ15
.
.
.
.
.
.
16
Data
Input
Buffer
Data
Output
Buffer
16
1024
Column Decoder
10
Address Input Buffer
Control
16
Column I/O
Write Driver
Sense Amp
16
1
A
B
C
D
E
F
G
H
LB
D8
D9
VSS
VCC
D14
D15
A18
2
OE
UB
D10
D11
D12
D13
A19
A8
3
A0
A3
A5
A17
NC
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CE1
D1
D3
D4
D5
WE
A11
6
CE2
D0
D2
VCC
VSS
D6
D7
NC
CE2
CE1
WE
OE
UB
LB
V
CC
V
SS
A14 A15 A16 A17 A18 A0 A1 A2 A3 A19
48-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
R0201-BS616LV1611
1
Revision 2.3
May.
2006
BSI [ BRILLIANCE SEMICONDUCTOR ]
