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BS616LV1622TC70 参数 Datasheet PDF下载

BS616LV1622TC70图片预览
型号: BS616LV1622TC70
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 1MX16, 70ns, CMOS, PDSO48]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 10 页 / 258 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
ADDRESS
BS616LV1622
t
RC
t
AA
t
OH
t
OH
D
OUT
READ CYCLE2
(1,3,4)
CE2
t
t
ACS2
ACS1
CE1
t
D
OUT
(5)
CLZ
(5)
t
CHZ
READ CYCLE3
(1,4)
ADDRESS
t
RC
t
OE
AA
t
CE2
OE
t
OH
t
t
t
t
(5)
CLZ
ACS2
CE1
OLZ
ACS1
t
t
OHZ
CHZ
(5)
(1,5)
LB,UB
t
BE
t
t
BA
BDO
D
OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V
IL
and CE2 = V
IH
.
3. Address valid prior to or coincident with CE1 transition low and CE2 transition high.
4. OE = V
IL
.
5. The parameter is guaranteed but not 100% tested.
R0201-BS616LV1622
7
Revision 2.1
Jan.
2004