BSI
DC ELECTRICAL CHARACTERISTICS
( TA = -40
o
C to + 85
o
C )
PARAMETER
NAME
V
IL
V
IH
I
IL
I
LO
V
OL
V
OH
I
CC
(4)
BS616LV1626
TEST CONDITIONS
Vcc=5V
Vcc=5V
PARAMETER
Guaranteed Input Low
Voltage
(3)
Guaranteed Input High
Voltage
(3)
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Standby Current-TTL
MIN. TYP.
-0.5
--
(1)
MAX.
0.8
Vcc+0.3
1
1
0.4
--
115
92
2.5
UNITS
V
V
uA
uA
V
V
mA
mA
2.2
--
--
--
2.4
--
--
--
--
--
--
--
--
--
--
--
Vcc = Max, V
IN
= 0V to Vcc
Vcc = Max, CE1 = V
IH
, or CE2 =
V
iL
, or
OE = V
IH
, V
I/O
= 0V to Vcc
Vcc = Max, I
OL
= 2mA
Vcc = Min, I
OH
= -1mA
CE1 = V
IL
and CE2 = V
IH
, I
DQ
= 0mA, F = Fmax
(2)
CE1 = V
IH
or CE2 = V
IL
, I
DQ
= 0mA
CE1
≧
Vcc-0.2V, or
CE2
≦
0.2V, V
IN
≧
Vcc - 0.2V
or V
IN
≦
0.2V
55ns
70ns
Vcc=5V
Vcc=5V
Vcc=5V
I
CCSB
(5)
Vcc=5V
I
CCSB1
Standby Current-CMOS
Vcc=5V
--
15
220
uA
1. Typical characteristics are at TA = 25
o
C.
2. Fmax = 1/t
RC
.
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. Icc
_Max.
is 113mA(@55ns) / 90mA(@70ns) during 0~70
o
C operation.
5. I
ccs
B1
is 110uA at Vcc=5.0V and T
A
=70
o
C.
R0201-BS616LV1626
4
Revision 2.1
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
