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BS616LV2018AI 参数 Datasheet PDF下载

BS616LV2018AI图片预览
型号: BS616LV2018AI
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 128K ×16位 [Very Low Power/Voltage CMOS SRAM 128K X 16 bit]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 221 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
AC ELECTRICAL CHARACTERISTICS
( TA = 0 to + 70
o
C , Vcc = 3.0V )
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
Write Cycle Time
Chip Select to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width
Write recovery Time
Date Byte Control to End of Write
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
BS616LV2018
BS616LV2018-70
MIN. TYP. MAX.
UNIT
--
--
--
--
--
--
--
30
--
--
30
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
AVAX
t
E1LWH
t
A VWL
t
AVWH
t
WLWH
t
WHAX
t
BW
t
WLQZ
t
DVWH
t
WHDX
t
GHQZ
t
WHOX
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
BW
(1)
t
WHZ
t
DW
t
DH
t
OHZ
t
OW
70
70
0
70
35
(CE,WE)
(LB,UB)
0
30
0
30
0
0
5
--
--
--
--
--
--
--
--
--
--
--
--
NOTE :
1. t
BW
is 30ns (@speed=70ns) with address toggle. ; t
BW
is 70ns (@speed=70ns) without address toggle.
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1
(1)
t
WC
ADDRESS
t
WR
OE
(3)
t
CW
CE
(5)
(11)
t
BW
LB,UB
t
AW
WE
(3)
t
AS
(4,10)
t
WP
(2)
t
OHZ
D
OUT
t
t
DW
DH
D
IN
R0201-BS616LV2018
6
Revision 2.0
April 2002