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BS616LV2021 参数 Datasheet PDF下载

BS616LV2021图片预览
型号: BS616LV2021
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 128K ×16或256K ×8位切换 [Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 255 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI  
BS616LV2021  
„ SWITCHING WAVEFORMS (READ CYCLE)  
READ CYCLE1 (1,2,4)  
t
RC  
ADDRESS  
t
AA  
t
OH  
t
OH  
D OUT  
READ CYCLE2 (1,3,4)  
CE2  
t
t
ACS2  
ACS1  
CE1  
(5)  
(5)  
CLZ  
t
CHZ  
t
D OUT  
READ CYCLE3 (1,4)  
ADDRESS  
t
RC  
t
AA  
OE  
t
OH  
t
OE  
CE2  
CE1  
t
ACS2  
t
OLZ  
(5)  
OHZ  
t
ACS1  
t
t
(5)  
CLZ  
(1,5)  
t
CHZ  
LB,UB  
D OUT  
t
BE  
t
BDO  
t
BA  
NOTES:  
1. WE is high in read Cycle.  
2. Device is continuously selected when CE1 = VIL and CE2 = VIH.  
3. Address valid prior to or coincident with CE1 transition low and CE2 transition high.  
4. OE = VIL .  
5. Transition is measured 500mV from steady state with CL = 30pF as shown in Figure 1B.  
The parameter is guaranteed but not 100% tested.  
Revision 2.4  
April 2002  
R0201-BS616LV2021  
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