BSI
FEATURES
Very Low Power/Voltage CMOS SRAM
256K X 16 bit
DESCRIPTION
BS616LV4011
• Very low operation voltage : 2.4 ~ 5.5V
• Very low power consumption :
Vcc = 3.0V
C-grade: 20mA (Max.) operating current
I-grade: 25mA (Max.) operating current
0.25uA (Typ.) CMOS standby current
Vcc = 5.0V
C-grade: 45mA (Max.) operating current
I-grade: 50mA (Max.) operating current
1.5uA (Typ.) CMOS standby current
• High speed access time :
-70
70ns (Max.) at Vcc = 3.0V
-10
100ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
The BS616LV4011 is a high performance, very low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.25uA and maximum access time of 70/100ns in 3V operation.
Easy memory expansion is provided by active LOW chip
enable(CE), active LOW output enable(OE) and three-state output
drivers.
The BS616LV4011 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV4011 is available in DICE form, JEDEC standard 44-pin
TSOP Type II package and 48-pin BGA package.
PRODUCT FAMILY
PRODUCT
FAMILY
BS616LV4011DC
BS616LV4011EC
BS616LV4011BC
BS616LV4011AC
BS616LV4011DI
BS616LV4011EI
BS616LV4011BI
BS616LV4011AI
OPERATING
TEMPERATURE
Vcc
RANGE
SPEED
( ns )
Vcc=
3.0V
( I
CCSB1
, Max )
POWER DISSIPATION
STANDBY
Operating
( I
CC
, Max )
PKG TYPE
DICE
TSOP2-44
BGA-48-0810
BGA-48-0608
DICE
TSOP2-44
BGA-48-0810
BGA-48-0608
Vcc=
3.0V
1.5uA
Vcc=
5.0V
15uA
Vcc=
3.0V
20mA
Vcc=
5.0V
45mA
+0 C to +70 C
O
O
2.4V ~ 5.5V
70/100
-40
O
C to +85
O
C
2.4V ~ 5.5V
70/100
3uA
50uA
25mA
50mA
PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
GND
DQ4
DQ5
DQ6
DQ7
WE
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
A12
BLOCK DIAGRAM
A4
A3
A2
A1
A0
A17
A16
A15
A14
A13
A12
Address
Input
Buffer
22
Row
Decoder
2048
Memory Array
2048 x 2048
BS616LV4011EC
BS616LV4011EI
2048
DQ0
16
Data
Input
Buffer
16
Column I/O
.
.
.
.
DQ15
.
.
.
.
Write Driver
Sense Amp
128
Column Decoder
16
Data
Output
16
Buffer
CE
WE
OE
UB
LB
Vcc
Gnd
Control
14
Address Input Buffer
A11 A10 A9 A8 A7 A6 A5
Brilliance Semiconductor Inc
.
reserves the right to modify document contents without notice.
R0201-BS616LV4011
1
Revision 2.4
April 2002
BSI [ BRILLIANCE SEMICONDUCTOR ]
