BSI
ABSOLUTE MAXIMUM RATINGS
(1)
SYMBOL
V
TERM
T
BIAS
T
STG
P
T
I
OUT
PARAMETER
Terminal Voltage
Respect to GND
with
BS616LV1013
OPERATING RANGE
UNITS
V
O
RATING
-0.5 to
Vcc+0.5
-40 to +125
-60 to +150
1.0
20
RANGE
Commercial
Industrial
AMBIENT
TEMPERATURE
0
O
C to +70
O
C
-40
O
C to +85
O
C
Vcc
2.7V ~ 3.6V
2.7V ~ 3.6V
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
C
C
O
W
mA
CAPACITANCE
(1)
(TA = 25
o
C, f = 1.0 MHz)
SYMBOL
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
C
IN
C
DQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
MAX.
UNIT
V
IN
=0V
V
I/O
=0V
6
8
pF
pF
1. This parameter is guaranteed and not 100% tested.
DC ELECTRICAL CHARACTERISTICS
( TA = 0
o
C to + 70
o
C )
PARAMETER
NAME
V
IL
V
IH
I
IL
I
LO
V
OL
V
OH
I
CC
I
CCSB
I
CCSB1
PARAMETER
Guaranteed Input Low
(2)
Voltage
Guaranteed Input High
(2)
Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Standby Current-TTL
Standby Current-CMOS
TEST CONDITIONS
Vcc=3.0V
MIN. TYP.
-0.5
2.0
--
--
Vcc=3.0V
(1)
MAX.
0.8
Vcc+0.2
1
1
0.4
--
20
1
UNITS
V
V
uA
uA
V
V
mA
mA
uA
--
--
--
--
--
--
--
--
Vcc=3.0V
Vcc = Max, V
IN
= 0V to Vcc
Vcc = Max, CE = V
IH
, or OE = V
IH
,
V
I/O
= 0V to Vcc
Vcc = Max, I
OL
= 2mA
Vcc = Min, I
OH
= -1mA
CE = V
IL
, I
DQ
= 0mA, F = Fmax
CE = V
IH
, I
DQ
= 0mA
CE
≧
Vcc -0.2V,
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
(3)
--
2.4
--
--
--
Vcc=3.0V
Vcc=3.0V
Vcc=3.0V
Vcc=3.0V
0.02
0.5
1. Typical characteristics are at TA = 25
o
C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
RC
.
DATA RETENTION CHARACTERISTICS
( TA = 0
o
C to + 70
o
C )
SYMBOL
V
DR
I
CCDR
t
CDR
t
R
PARAMETER
Vcc for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
TEST CONDITIONS
CE
≧
Vcc - 0.2V
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
CE
≧
Vcc - 0.2V
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
See Retention Waveform
MIN.
1.5
--
0
T
RC (2)
TYP.
(1)
--
0.02
--
--
MAX.
--
0.3
--
--
UNITS
V
uA
ns
ns
1. Vcc = 1.5V, T
A
= + 25
O
C
2. t
RC
= Read Cycle Time
R0201-BS616LV1013
3
Revision 1.1
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
