ABSOLUTE MAXIMUM RATINGS
(1)
SYMBOL
V
TERM
T
BIAS
T
STG
P
T
I
OUT
PARAMETER
Terminal Voltage with
Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
BSI
BS616LV2016
OPERATING RANGE
UNITS
V
O
RATING
-0.5 to
Vcc+0.5
-40 to +85
-60 to +150
1.0
20
RANGE
Commercial
Industrial
AMBIENT
TEMPERATURE
0
O
C to +70
O
C
-40
O
C to +85
O
C
Vcc
2.4V ~ 5.5V
2.4V ~ 5.5V
C
C
O
W
mA
CAPACITANCE
(1)
(TA = 25
o
C, f = 1.0 MHz)
SYMBOL
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
C
IN
C
DQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
MAX.
UNIT
V
IN
=0V
V
I/O
=0V
6
8
pF
pF
1. This parameter is guaranteed and not 100% tested.
DC ELECTRICAL CHARACTERISTICS
( TA = -40 to + 85
o
C )
PARAMETER
NAME
V
IL
V
IH
I
IL
I
LO
PARAMETER
Guaranteed Input Low
(3)
Voltage
Guaranteed Input High
(3)
Voltage
Input Leakage Current
Output Leakage Current
TEST CONDITIONS
Vcc =3.0V
Vcc =5.0V
Vcc =3.0V
Vcc =5.0V
Vcc = Max, V
IN
= 0V to Vcc
Vcc = Max,CE = V
IH
or OE = V
IH
,
V
I/O
= 0V to Vcc
Vcc =3.0V
Vcc = Max, I
OL
= 2.0mA
MIN.
-0.5
2.0
2.2
--
--
TYP.
(1)
--
--
--
--
MAX.
0.8
V
cc
+0.3
1
1
UNITS
V
V
uA
uA
V
OL
Output Low Voltage
Vcc =5.0V
Vcc =3.0V
--
--
0.4
V
V
OH
Output High Voltage
Operating Power Supply
Current
Standby Current-TTL
Vcc = Min, I
OH
= -1.0mA
CE = V
IL
,
(2)
I
DQ
= 0mA, F = Fmax
CE=V
IH
I
DQ
= 0mA
CE
≧
V
cc
-0.2
V
,
V
IN
≧V
cc
-0.2
V
or
V
IN
≦0.2
V
Vcc =5.0V
Vcc =3V
Vcc =5V
70ns
70ns
2.4
--
--
25
55
0.5
V
I
CC
(5)
--
--
mA
Vcc =3.0V
--
Vcc =5.0V
Vcc =3.0V
Vcc =5.0V
--
0.3
1.0
--
I
CCSB
mA
1.0
5
30
uA
I
CCSB1
(4)
Standby Current-CMOS
1.
Typical characteristics are at T
A
= 25
o
C.
2.
Fmax = 1/t
RC
.
3.
These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4.I
ccs
B1_Max.
is 3uA / 10uA at Vcc=3V / 5V and T
A
=70
o
C.
5.
Icc
_Max.
is 30mA(@3V) / 62mA(@5V) under 55ns operation.
DATA RETENTION CHARACTERISTICS
( TA = -40 to + 85
o
C )
SYMBOL
V
DR
(3)
PARAMETER
Vcc for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
TEST CONDITIONS
CE
≧
Vcc - 0.2V
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
CE
≧
Vcc - 0.2V
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
See Retention Waveform
MIN.
1.5
--
0
T
RC (2)
TYP.
(1)
--
0.1
--
--
MAX.
--
1.0
--
--
UNITS
V
uA
ns
ns
I
CCDR
t
CDR
t
R
1.
Vcc = 1.5V, T
A
= + 25
O
C
R0201-BS616LV2016
2.
t
RC
= Read Cycle Time
3.
Icc
DR_MAX.
is 0.7uA at T
A
=70
o
C.
Revision 1.1
Jan.
2004
3
BSI [ BRILLIANCE SEMICONDUCTOR ]
