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BS616LV4016 参数 Datasheet PDF下载

BS616LV4016图片预览
型号: BS616LV4016
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 256K ×16位 [Very Low Power/Voltage CMOS SRAM 256K X 16 bit]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 266 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
AC TEST CONDITIONS
(Test Load and Input/Output Reference)
BS616LV4016
KEY TO SWITCHING WAVEFORMS
Vcc / 0V
WAVEFORM
INPUTS
MUST BE
STEADY
MAY CHANGE
FROM H TO L
MAY CHANGE
FROM L TO H
DON T CARE:
ANY CHANGE
PERMITTED
DOES NOT
APPLY
OUTPUTS
MUST BE
STEADY
WILL BE
CHANGE
FROM H TO L
WILL BE
CHANGE
FROM L TO H
CHANGE :
STATE
UNKNOWN
CENTER
LINE IS HIGH
IMPEDANCE
”OFF ”STATE
Input Pulse Levels
Input Rise and Fall Times
Input and Output
Timing Reference Level
Output Load
1V/ns
0.5Vcc
C
L
= 30pF+1TTL
C
L
= 100pF+1TTL
,
AC ELECTRICAL CHARACTERISTICS
( TA = -40 to + 85
o
C )
READ CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
CYCLE TIME : 55ns
CYCLE TIME : 70ns
(Vcc = 2.4~3.6V)
DESCRIPTION
Read Cycle Time
Address Access Time
Chip Select Access Time
Data Byte Control Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Data Byte Control to Output Low Z
Output Enable to Output in Low Z
Chip Deselect to Output in High Z
Data Byte Control to Output High Z
Output Disable to Output in High Z
Data Hold from Address Change
(Vcc = 2.7~3.6V)
MIN. TYP. MAX.
UNIT
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MIN. TYP. MAX.
t
AVAX
t
AVQV
t
ELQV
t
BA
t
GLQV
t
E1LQX
t
BE
t
GLQX
t
EHQZ
t
BDO
t
GHQZ
t
AXOX
NOTE :
t
RC
t
AA
t
ACS
t
BA
t
OE
t
CLZ
t
BE
t
OLZ
t
CHZ
t
BDO
t
OHZ
t
OH
(1)
55
--
--
(LB,UB)
--
--
10
(LB,UB)
10
5
--
(LB,UB)
--
--
10
--
--
--
--
--
--
--
--
--
--
--
--
--
55
55
30
30
--
--
--
30
30
25
--
70
--
--
--
--
10
10
5
--
--
--
10
--
--
--
--
--
--
--
--
--
--
--
--
70
70
35
35
--
--
--
35
35
30
--
1. t
BA
is 30ns/35ns (@speed=55ns/70ns) with address toggle. ; t
BA
is 55ns/70ns (@speed=55ns/70ns) without address toggle.
R0201-BS616LV4016
5
Revision 1.1
Jan.
2004