BS616LV1611FCG70 参数 Datasheet PDF下载

BSI

DC ELECTRICAL CHARACTERISTICS

( TA = -40 to + 85

o

C )

PARAMETER

NAME

V

IL

V

IH

I

IL

I

LO

V

OL

V

OH

I

CC

(4)

BS616LV1611

TEST CONDITIONS

Vcc=3V

Vcc=5V

Vcc=3V

Vcc=5V

PARAMETER

Guaranteed Input Low

Voltage

(3)

Guaranteed Input High

Voltage

(3)

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

Operating Power Supply

Current

Standby Current-TTL

MIN. TYP.

-0.5

-0.5

--

(1)

MAX.

0.8

0.8

Vcc+0.3

Vcc+0.3

1

1

0.4

0.4

--

--

37

92

1.3

2.5

20

UNITS

2.0

2.2

--

--

--

--

2.4

2.4

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

3

15

V

V

uA

uA

V

V

mA

mA

Vcc = Max, V

IN

= 0V to Vcc

Vcc = Max, CE1 = V

IH

, or CE2 =

V

iL

, or

OE = V

IH

, V

I/O

= 0V to Vcc

Vcc = Max, I

OL

= 2mA

Vcc = Min, I

OH

= -1mA

CE1 = V

IL

and CE2 = V

IH

, I

DQ

= 0mA, F = Fmax

(2)

CE1 = V

IH

or CE2 = V

IL

, I

DQ

= 0mA

CE1

≧

Vcc-0.2V or

CE2

≦

0.2V ;V

IN

≧

Vcc - 0.2V

or V

IN

≦

0.2V

70ns

70ns

Vcc=3V

Vcc=5V

Vcc=3V

Vcc=5V

Vcc=3V

Vcc=5V

Vcc=3V

Vcc=5V

Vcc=3V

Vcc=5V

I

CCSB

I

CCSB1

(5)

Standby Current-CMOS

uA

220

1. Typical characteristics are at TA = 25

o

C.

2. Fmax = 1/t

RC

.

3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

4. Icc

_Max.

is 46mA(@3.0V) / 115mA(@5.0V) under 55ns operation.

5.I

cc

s

B1

is 10uA/110uA at Vcc=3.0V/5.0V and T

A

=70

o

C.

DATA RETENTION CHARACTERISTICS

( TA = -40 to + 85

o

C )

SYMBOL

V

DR

(3)

PARAMETER

Vcc for Data Retention

Data Retention Current

Chip Deselect to Data

Retention Time

Operation Recovery Time

TEST CONDITIONS

CE1

≧

Vcc - 0.2V or CE2

≦

0.2V,

V

IN

≧

Vcc - 0.2V or V

IN

≦

0.2V

CE1

≧

Vcc - 0.2V or CE2

≦

0.2V,

V

IN

≧

Vcc - 0.2V or V

IN

≦

0.2V

See Retention Waveform

MIN. TYP.

1.5

--

0

T

RC (2)

--

(1)

MAX.

--

5.0

--

--

UNITS

V

uA

ns

ns

I

CCDR

t

CDR

t

R

1.5

--

--

1. Vcc = 1.5V, T

A

= + 25

O

C

2. t

RC

= Read Cycle Time

O

C.

3. I

cc

DR

(Max.) is 2.5uA at T

A

=70

LOW V

CC

DATA RETENTION WAVEFORM (1)

( CE1 Controlled )

Data Retention Mode

Vcc

V

IH

Vcc

V

DR

≥

1.5V

Vcc

t

CDR

CE1

≥

Vcc - 0.2V

t

R

V

IH

CE1

LOW V

CC

DATA RETENTION WAVEFORM (2)

( CE2 Controlled )

Data Retention Mode

Vcc

Vcc

V

DR

≧

1.5V

Vcc

t

CDR

t

R

CE2

≦

0.2V

CE2

R0201-BS616LV1611

V

IL

V

IL

3

Revision 2.1

Jan.

2004