BSI
DATA RETENTION CHARACTERISTICS
( TA = -40
o
C to +85
o
C )
SYMBOL
V
DR
BS616LV1622
TEST CONDITIONS
CE1
≧
Vcc - 0.2V or CE2
≦
0.2V or
LB
≧
Vcc - 0.2V and UB
≧
Vcc - 0.2V
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
CE1
≧
Vcc - 0.2V or CE2
≦
0.2V or
LB
≧
Vcc - 0.2V and UB
≧
Vcc - 0.2V
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
PARAMETER
Vcc for Data Retention
MIN.
1.5
TYP.
(1)
--
MAX.
--
UNITS
V
(3)
I
CCDR
Data Retention Current
Chip Deselect to Data
Retention Time
--
1.5
5
uA
t
CDR
t
R
0
See Retention Waveform
T
RC
(2)
--
--
--
--
ns
ns
Operation Recovery Time
1. Vcc = 1.5V, T
A
= + 25
O
C
2. t
RC
= Read Cycle Time
3. I
cc
DR
(Max.) is
2.5uA
at T
A
=70
O
C.
LOW V
CC
DATA RETENTION WAVEFORM (1)
( CE1 Controlled )
Data Retention Mode
Vcc
V
IH
Vcc
V
DR
≧
1.5V
Vcc
t
CDR
CE1
≧
Vcc - 0.2V
t
R
V
IH
CE1
LOW V
CC
DATA RETENTION WAVEFORM (2)
( CE2 Controlled )
Data Retention Mode
Vcc
Vcc
V
DR
≧
1.5V
Vcc
t
CDR
t
R
CE2
≦
0.2V
CE2
V
IL
V
IL
R0201-BS616LV1622
5
Revision 2.1
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
