欢迎访问ic37.com |
会员登录 免费注册
发布采购

BS616LV2019TCG70 参数 Datasheet PDF下载

BS616LV2019TCG70图片预览
型号: BS616LV2019TCG70
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗CMOS SRAM 128K ×16位 [Very Low Power CMOS SRAM 128K X 16 bit]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 234 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
 浏览型号BS616LV2019TCG70的Datasheet PDF文件第3页浏览型号BS616LV2019TCG70的Datasheet PDF文件第4页浏览型号BS616LV2019TCG70的Datasheet PDF文件第5页浏览型号BS616LV2019TCG70的Datasheet PDF文件第6页浏览型号BS616LV2019TCG70的Datasheet PDF文件第7页浏览型号BS616LV2019TCG70的Datasheet PDF文件第8页浏览型号BS616LV2019TCG70的Datasheet PDF文件第10页浏览型号BS616LV2019TCG70的Datasheet PDF文件第11页  
BS616LV2019
ORDERING INFORMATION
BS616LV2019
X
X
Z
YY
SPEED
55: 55ns
70: 70ns
PKG MATERIAL
G: Green, RoHS Compliant
GRADE
o
o
C: +0 C ~ +70 C
o
o
I: -40 C ~ +85 C
PACKAGE
D: DICE
A: BGA-48-0608
T: TSOP I-48
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does
not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result
in significant injury or death, including life-support systems and critical medical instruments.
PACKAGE DIMENSIONS
HD
12°(2X)
12°(2X)
UNIT
SYMBO
INCH
0.0433±0.004
0.004±0.002
0.039±0.002
0.009±0.002
0.008±0.001
0.004 ~ 0.008
0.004 ~ 0.006
0.645±0.004
0.472±0.004
0.020±0.004
0.708±0.008
0.0236±0.006
0.0315±
0.004 Max.
0°~8°
MM
1.10±0.10
0.10±0.05
1.00±0.05
0.22±0.05
0.20±0.03
0.10 ~ 0.21
0.10 ~ 0.16
16.40±0.10
11.80±0.10
0.50±0.10
18.00±0.20
0.60±0.15
0.80±0.10
0.1 Max.
0°~8°
1
4
e
b
E
2
2
"A"
D
Seating
12°(2x)
y
A
A1
A2
b
b1
c
c1
D
E
e
HD
L
L1
y
θ
A
A2
GAUGE PLANE
A
A1
2
2
SEATING PLANE
12°(2x)
WITH PLATING
A
L
L1
θ
b
"A" DETAIL VIEW
c c
BASE METAL
b1
SECTION A-A
1
4
TSOP I-48 Pin
R0201-BS616LV2019
9
Revision
1.4
Oct.
2008