Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3019
2N3020
TO-39
Metal Can Package
Designed for use in General Purpose Amplifier and High Speed Switching Applications
These Transistors are also Suitable for High Current Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ Ta=25º C
Power Dissipation@ Tc=25ºC
Junction Temperature
Storage Temperature
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
SYMBOL
V
CEO
V
CBO
V
EBO
I
CM
P
D
T
j
T
stg
R
th(j-a)
R
th(j-c)
VALUE
80
140
7
1
800
5
+200
-65 to +200
UNITS
V
V
V
A
mW
W
ºC
ºC
218.7
35
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Leakage Current
Emitter Leakage Current
Collector Emitter Saturation Voltage
SYMBOL
BV
CEO
*
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
*
V
BE(sat)
*
TEST CONDITION
I
C
=30mA,I
B
=0
I
C
=100µA, I
E
=0
I
E
=100µA, I
C
=O
V
CB
=90V, I
E
=0
V
CB
=90V, I
E
=0, Ta=150ºC
V
EB
=5V, I
C
=0
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
MIN
80
140
7
10
10
10
0.2
0.5
1.1
MAX
UNITS
V
V
V
nΑ
µA
nΑ
V
V
V
Base Emitter Saturation Voltage
Continental Device India Limited
Data Sheet
Page 1 of 4
CDIL [ Continental Device India Limited ]
