NEC's L TO S BAND
LOW NOISE AMPLIFIER NPN GaAs HBT
FEATURES
•
HIGH POWER GAIN:
G
A
= 16 dB TYP , MSG = 18 dB TYP
at f = 2 GH
Z
, V
CE
= 2 V, I
C
= 3 mA, Z
S
= Z
L
= 50
Ω
LOW NOISE:
NF = 1.0 dB TYP
at f = 2 GH
Z
, V
CE
= 2 V, I
C
= 3 mA, Z
S
= Z
L
= 50
Ω
OIP
3
= +25 dBm TYP
at f = 2 GH
Z
, V
CE
= 2 V, I
C
= 10 mA, Z
S
= Z
OPT
,1
TONE
4 PIN SUPER MINI MOLD PACKAGE
GROUNDED EMITTER TRANSISTOR
+0.10
0.4 -0.05
0.3
1
NE52418
PACKAGE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 18
2.1
±
0.2
1.25
±
0.1
+0.10
0.3 -0.05
(LEADS 2, 3, 4)
•
V45
2.0
±
0.2
0.65
2
3 0.65
1.3
0.65
4
•
•
•
0.60
DESCRIPTION
NEC's NE52418 is a low cost NPN GaAs HBT(InGaP)
suitable for front end LNA's in L/S band mobile communica-
tions applications. The NE52418 is housed in a 4-pin super
mini-mold package, making it ideal for high-density design.
NEC's stringent quality assurance and test procedures
ensure the highest reliability performance
0.9
±
0.1
0 to 0.1
+0.10
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Emitter
4. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
EBO
I
CBO
h
FE
NF
G
a
|S
21e
|
2
OIP
3
PARAMETERS AND CONDITIONS
Emitter to Base Leakage Current at V
EBO
= 3 V
Collector to Base Leakage Current at V
CBO
= 3 V
DC Current Gain at V
CE
= 2 V, I
C
= 3 mA
Noise Figure at V
CE
= 2 V, I
C
= 3 mA, f = 2 Ghz, Z
S
= Z
L
= 50
Ω
Associated Gain at V
CE
= 2 V, I
C
= 3 mA, f = 2 Ghz,
Z
S
= Z
L
= 50
Ω
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 Ghz
Out Third - Order Distortion Intercept Point at V
CE
= 2 V,
f = 2 GHz, Z
S
= Z
L
= Z
OPT
, I
C
= 10 mA, 1 tone
dB
dBm
—
—
20
25
—
—
UNITS
µA
µA
—
dB
dB
MIN
—
—
100
—
14
NE52418
18
TYP
0.2
0.2
140
1.0
16
MAX
1.0
1.0
180
1.5
—
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
