NPN SILICON RF TRANSISTOR
NE85633 / 2SC3356
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
3-PIN MINIMOLD
FEATURES
• Low noise and high gain : NF = 1.1 dB TYP., G
a
= 11 dB TYP. @ V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
• High power gain : MAG = 13 dB TYP. @ V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
ORDERING INFORMATION
Part Number
NE85633-A
2SC3356
NE85633-T1B-A
2SC3356-T1B
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
T
j
T
stg
Ratings
20
12
3.0
100
200
150
65
to +150
Unit
V
V
V
mA
mW
C
C
Note
Free air
Document No. PU10209EJ02V0DS (2nd edition)
Date Published June 2004 CP(K)
The mark
shows major revised points.
CEL [ CALIFORNIA EASTERN LABS ]
