celduc
®
r
e
l
a
i
s
S/CON/SOM040100/A/08/12/05
PRELIMINARY DATA
Page 4/5 UK
CHARACTERISTIC CURVES
Fig. 5
Ic (mADC)
50
45
40
35
30
25
20
15
10
5
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32
Uc (VDC)
0
-50
0
50
100
150
INPUT CHARACTERISTIC
Fig. 6
ON RESISTANCE VS JUNCTION TEMPERATURE
-35°C
-35°C
25°C
RDSon
30
(mOhms)
25
20
100°C
15
10
5
Junction Temperature (°C)
Fig. 7
Permanent current
Ie (ARMS)
POWER DISSIPATED AND LOAD CURRENT LIMIT VS TEMPERATURE
Please refer to the installation notice for precautions
about mounting the device on a heatsink.
Power dissipated
(W)
45
1.2K/W
1.1K/W
0.9K/W
0.75K/W
0.55K/W
0.3K/W
60.8
48
36.8
27
18.8
12
6.75
3
0.75
10K/W
4K/W
2.2K/W
2.1K/W
40
35
30
25
20
15
10
5
0
0
10K/W = No Heatsink
2.1K/W = WF210000
0.75K/W = WF070000
10
20
30
40
50
60
70
80
90
100
0
110
Ambient temperature (°C)
4K/W = 150x150x3mm aluminium sheet
1.2K/W = WF121000
0.55K/W = WF050000
2.2K/W = WF262100
1.1K/W = WF131100
0.3K/W = WF031100
2.2K/W = WF151200
0.9K/W = WF115100
Fig. 8
PEAK OVERLOAD CURRENT vs. PULSE DURATION CHARACTERISTIC
Ie 360
(Apk)
320
280
240
200
160
120
Repetitive D=10% (Tc=100°C, Tjmax=175°C)
Repetitive D=20% (Tc=100°C, Tjmax=175°C)
Non-repetitive D=1% (Tc=100°C, Tjmax=175°C)
Repetitive D=5% (Tc=100°C, Tjmax=175°C)
t
1
D
(
%
)
=
×
100
t
2
80
40
0
0,1
Repetitive D=50% (Tc=100°C, Tjmax=125°C)
1
10
100
1000
Pulse duration (ms)
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