2N2906
2N2907
2N2906A
2N2907A
w w w. c e n t r a l s e m i . c o m
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2906, 2N2907
series types are silicon PNP epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
2N2906
2N2907
60
40
5.0
600
400
1.8
-65 to +200
438
97
2N2906A
2N2907A
60
60
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ
JA
Θ
JC
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
2N2906
2N2907
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=50V
-
20
ICBO
VCB=50V, TA=150°C
-
20
ICEV
VCE=30V, VEB=0.5V
-
50
BVCBO
IC=10μA
60
-
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
fT
Cob
Cib
ton
toff
IC=10mA
IE=10μA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=20V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=2.0V, IC=0, f=1.0MHz
VCC=30V, IC=150mA, IB1=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
40
5.0
-
-
-
-
200
-
-
-
-
-
-
0.4
1.6
1.3
2.6
-
8.0
30
45
100
2N2906A
2N2907A
MIN
MAX
-
10
-
10
-
50
60
-
60
5.0
-
-
-
-
200
-
-
-
-
-
-
0.4
1.6
1.3
2.6
-
8.0
30
45
100
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
R4 (30-January 2012)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
