2N3724
2N3725
2N3725A
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3724, 2N3725,
2N3725A types are Silicon NPN Planar Epitaxial
Transistors designed for high voltage, high current,
high speed switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
PD
TJ, Tstg
2N3724
50
30
2N3725 2N3725A
80
80
50
50
6.0
1.2
1.75
0.8
1.0
3.5
5.0
-65 to +200
UNITS
V
V
V
A
A
W
W
°C
0.8
3.5
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
2N3724
2N3725
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
IB
VCE=50V
-
10
-
-
IB
VCE=80V
-
-
-
10
ICBO
VCB=40V
-
1.7
-
-
ICBO
VCB=40V, TA=100°C
-
120
-
-
ICBO
VCB=60V
-
-
-
1.7
ICBO
VCB=60V, TA=100°C
-
-
-
120
ICES
VCE=50V
-
10
-
-
ICES
VCE=80V
-
-
-
10
BVCBO
IC=10µA
50
-
80
-
BVCES
IC=10µA
50
-
80
-
BVCEO
IC=10mA
30
-
50
-
BVEBO
IE=10µA
6.0
-
6.0
-
VCE(SAT)
IC=10mA, IB=1.0mA
-
0.25
-
0.25
VCE(SAT)
IC=100mA, IB=10mA
-
0.20
-
0.26
VCE(SAT)
IC=300mA, IB=30mA
-
0.32
-
0.40
VCE(SAT)
IC=500mA, IB=50mA
-
0.42
-
0.52
VCE(SAT)
IC=800mA, IB=80mA
-
0.65
-
0.80
VCE(SAT)
IC=1.0A, IB=100mA
-
0.75
-
0.95
VBE(SAT)
IC=10mA, IB=1.0mA
-
0.76
-
0.76
VBE(SAT)
IC=100mA, IB=10mA
-
0.86
-
0.86
VBE(SAT)
IC=300mA, IB=30mA
-
1.1
-
1.1
VBE(SAT)
IC=500mA, IB=50mA
0.80
1.1
0.80
1.1
VBE(SAT)
IC=800mA, IB=80mA
-
1.5
-
1.5
VBE(SAT)
IC=1.0A, IB=100mA
-
1.7
-
1.7
2N3725A
MIN MAX
-
-
-
10
-
-
-
-
-
0.5
-
50
-
-
-
10
80
-
80
-
50
-
6.0
-
-
0.25
-
0.26
-
0.40
-
0.52
-
0.80
-
0.90
-
0.76
-
0.86
-
1.0
0.80
1.1
-
1.3
0.90
1.4
UNITS
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
R1 (5-December 2010)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
