2N3789 参数 Datasheet PDF下载

DATA SHEET

2N3789

2N3790

2N3791

2N3792

PNP POWER TRANSISTORS

JEDEC TO-3 CASE

DESCRIPTION

The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar

process and designed for medium speed switching and amplifier applications.

MAXIMUM RATINGS (TC=25°C unless otherwise noted)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

IB

PD

TJ,Tstg

Θ

JC

2N3789

2N3791

60

60

7.0

10

4.0

150

-65 to +200

1.17

2N3790

2N3792

80

80

UNITS

V

V

V

A

A

W

°C

°C/W

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

SYMBOL

ICEV

ICEV

IEBO

BVCEO

VCE(SAT)

VCE(SAT)

VBE(ON)

VBE(ON)

VBE(ON)

hFE

hFE

hFE

hFE

fT

TEST CONDITIONS

VCE= Rated VCEO, VEB=1.5V

VCE= Rated VCEO, VEB=1.5V, TC=150°C

VEB=7.0V

IC=200mA

IC=4.0A, IB=400mA (2N3789, 2N3790)

IC=5.0A, IB=500mA (2N3791, 2N3792)

VCE=2.0V, IC=5.0A (2N3789, 2N3790)

VCE=2.0V, IC=5.0A (2N3791, 2N3792)

VCE=4.0V, IC=10A

VCE=2.0V, IC=1.0A (2N3789, 2N3790)

VCE=2.0V, IC=1.0A (2N3791, 2N3792)

VCE=2.0V, IC=3.0A (2N3789, 2N3790)

VCE=2.0V, IC=3.0A (2N3791, 2N3792)

VCE=10V, IC=500mA, f=1.0MHz

2N3789

2N3791

MIN

MAX

1.0

5.0

5.0

60

1.0

1.0

2.0

1.8

4.0

25

90

50

180

15

30

4.0

2N3790

2N3792

MIN

MAX

1.0

5.0

5.0

80

1.0

1.0

2.0

1.8

4.0

25

90

50

180

15

30

4.0

UNITS

mA

mA

mA

V

V

V

V

V

V

MHz

(SEE REVERSE SIDE)

R1