2N3866
2N3866A
NPN SILICON
HIGH FREQUENCY TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3866 and
2N3866A are Silicon NPN RF Transistors, mounted
in a hermetically sealed package, designed for high
frequency amplifier and oscillator applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
VCEO
VEBO
IC
IB
PD
TJ, Tstg
Θ
JC
55
30
3.5
0.4
2.0
5.0
-65 to +200
35
MAX
20
0.1
5.0
0.1
55
55
30
3.5
1.0
10
25
5.0
500
800
3.0
10
45
200
200
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
μA
mA
mA
mA
V
V
V
V
V
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEO
VCE=28V
ICEV
VCE=55V, VBE(OFF)=1.5V
ICEV
IEBO
BVCER
BVCBO
BVCEO
BVEBO
VCE(SAT)
hFE
hFE
hFE
fT
fT
Cob
GPE
η
VCE=30V, VBE(OFF)=1.5V, TC=200°C
VEB=3.5V
IC=5.0mA, RBE=10Ω
IC=500μA
IC=5.0mA
IE=100μA
IC=100mA, IB=20mA
VCE=5.0V, IC=50mA (2N3866)
VCE=5.0V, IC=50mA (2N3866A)
VCE=5.0V, IC=360mA
VCE=15V, IC=50mA, f=200MHz (2N3866)
VCE=15V, IC=50mA, f=200MHz (2N3866A)
VCB=28V, IE=0, f=1.0MHz
VCC=28V, Pout=1.0W, f=400MHz (Figure 1)
VCC=28V, Pout=1.0W, f=400MHz (Figure 1)
MHz
MHz
pF
dB
%
R2 (15-September 2010)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
