2N6040 2N6041 2N6042 PNP
2N6043 2N6044 2N6045 NPN
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6040 and
2N6043 Series types are Complementary Silicon
Power Transistors, manufactured by the epitaxial
base process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS:
(TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ
JC
2N6040
2N6043
60
60
2N6041
2N6044
80
80
5.0
8.0
16
120
75
-65 to +150
1.67
2N6042
2N6045
100
100
UNITS
V
V
V
A
A
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
ICBO
ICEV
ICEV
ICEO
IEBO
BVCEO
BVCEO
BVCEO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
VCB=Rated VCBO
VCE=Rated VCEO, VBE(OFF)=1.5V
VCE=Rated VCEO, VBE(OFF)=1.5V, TC=150°C
VCE=Rated VCEO
VEB=5.0V
IC=100mA (2N6040, 2N6043)
IC=100mA (2N6041, 2N6044)
IC=100mA (2N6042, 2N6045)
IC=4.0A, IB=16mA (2N6040, 2N6041, 2N6043, 2N6044)
IC=3.0A,
IC=8.0A,
IB=12mA (2N6042, 2N6045)
IB=80mA
MIN
MAX
20
20
200
20
2.0
UNITS
µA
µA
µA
µA
mA
V
V
V
60
80
100
2.0
2.0
4.0
4.5
2.8
1,000
1,000
100
20,000
20,000
V
V
V
V
V
IC=8.0A, IB=80mA
VCE=4.0V, IC=4.0A
VCE=4.0V, IC=4.0A (2N6040, 2N6041, 2N6043, 2N6044)
VCE=4.0V, IC=3.0A (2N6042, 2N6045)
VCE=4.0V, IC=8.0A
R1 (16-November 2009)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
