2N6383
2N6384
2N6385
NPN SILICON POWER
DARLINGTON TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3683 SERIES
types are NPN Silicon Power Darlington Transistors
designed for power amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS:
(TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEX
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ
JC
2N6383
40
40
40
2N6384
60
60
60
5.0
10
15
250
100
-65 to +200
1.75
2N6385
80
80
80
UNITS
V
V
V
V
A
A
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
ICEV
ICEO
IEBO
BVCEO
BVCEO
BVCEO
BVCER
BVCER
BVCER
BVCEV
BVCEV
BVCEV
VCEV=Rated VCEO,
VCEV=Rated VCEO,
VCE=Rated VCEO
VEB=5.0V
IC=200mA (2N6383)
IC=200mA (2N6384)
IC=200mA (2N6385)
IC=200mA, RBE=100Ω (2N6383)
IC=200mA, RBE=100Ω (2N6384)
IC=200mA, RBE=100Ω (2N6385)
IC=200mA, VBE(off)=1.5V (2N6383)
IC=200mA,
IC=200mA,
VBE(off)=1.5V (2N6384)
VBE(off)=1.5V (2N6385)
40
60
80
40
60
80
40
60
80
VBE(off)=1.5V
VBE(off)=1.5V, TC=150°C
MAX
300
3.0
1.0
10
UNITS
μA
mA
mA
mA
V
V
V
V
V
V
V
V
V
R1 (28-August 2008)