2N6676
2N6677
2N6678
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6676 SERIES
types are NPN Silicon Power Transistors designed for
high voltage switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS:
(TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCEV
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ
JC
2N6676
450
300
2N6677
550
350
8.0
15
20
5.0
175
-65 to +200
1.0
2N6678
650
400
UNITS
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEV, VBE(off)=1.5V
ICEV
VCE=Rated VCEV, VBE(off)=1.5V, TC=100°C
IEBO
BVCEO
BVCEO
BVCEO
VCE(SAT)
VBE(SAT)
hFE
Cob
ft
td
tr
ts
tf
VEB=8.0V
IC=200mA (2N6676)
IC=200mA (2N6677)
IC=200mA (2N6678)
IC=15A, IB=3.0A
IC=15A, IB=3.0A
VCE=3.0V, IC=15A
VCB=10V, IE=0, f=1.0MHz
VCE=10V, IC=1.0A, f=5.0MHz
VCC=200V, IC=15A, IB1=IB2=3.0A
tp=20μs, Duty Cycle≤2.0%
VBB≈6.0V, RL=13.5Ω
8.0
300
350
400
MAX
100
1.0
2.0
UNITS
μA
mA
mA
V
V
V
1.5
1.5
500
3.0
10
0.1
0.6
2.5
0.5
V
V
pF
MHz
μs
μs
μs
μs
R0 (26-July 2010)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
