BCX70 SERIES
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX70 Series
types are NPN Silicon Transistors manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for general purpose
switching and amplifier applications.
MARKING CODES: BCX70G:
BCX70H:
BCX70J:
BCX70K:
AG
AH
AJ
AK
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(ON)
fT
Cc
Ce
NF
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
45
45
5.0
100
200
200
350
-65 to +150
357
CHARACTERISTICS:
(TA=25°C unless
TEST CONDITIONS
VCB=45V
VCB=45V, TA=150°C
VEB=4.0V
IC=10μA
IC=10mA
IE=1.0μA
IC=10mA, IB=250μA
IC=50mA, IB=1.25mA
IC=10mA, IB=250μA
IC=50mA, IB=1.25mA
VCE=5.0V, IC=2.0mA
VCE=5.0V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=200μA, RS=2.0kΩ,
f=1.0kHz, BW=200Hz
otherwise noted)
MIN
TYP
MAX
20
20
20
45
45
5.0
0.05
0.10
0.60
0.70
0.55
100
0.35
0.55
0.85
1.05
0.75
250
1.7
11
6.0
BCX70H
MIN
MAX
40
180
310
70
BCX70J
MIN MAX
30
250
460
90
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
MHz
pF
pF
dB
BCX70K
MIN MAX
100
380
630
100
BCX70G
MIN
MAX
hFE
hFE
hFE
VCE=5.0V,
VCE=5.0V,
VCE=1.0V,
IC=10μA
IC=2.0mA
IC=50mA
120
50
220
R2 (20-November 2009)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
