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BD139 参数 Datasheet PDF下载

BD139图片预览
型号: BD139
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 235 K
品牌: CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
 浏览型号BD139的Datasheet PDF文件第2页  
BD135
BD137
BD139
NPN SILICON TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BD135,
BD137, and BD139 are NPN Silicon Epitaxial
Planar Transistors designed for audio amplifier
and switching applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS:
(TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Power Dissipation (Tmb≤70°C)
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL BD135
VCBO
45
VCEO
VEBO
IC
ICM
IB
IBM
PD
PD
TJ, Tstg
Θ
Jmb
Θ
JA
45
BD137
60
60
5.0
1.5
2.0
0.5
1.0
8.0
1.25
-65 to +150
10
100
BD139
100
80
UNITS
V
V
V
A
A
A
A
W
W
°C
°C/W
°C/W
UNITS
nA
µA
nA
V
V
V
V
V
fT
hFE
hFE
hFE
BVCEO
VCE(SAT)
VBE(ON)
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=30V
ICBO
VCB=30V, TC=125°C
IEBO
VEB=5.0V
BVCEO
IC=30mA (BD135)
45
BVCEO
IC=30mA (BD137)
60
IC=30mA (BD139)
IC=500mA, IB=50mA
VCE=2.0V, IC=500mA
IC=5.0mA
IC=150mA
IC=500mA
80
MAX
100
10
100
0.5
1.0
40
63
25
190
BD135-10
BD137-10
BD139-10
MIN
MAX
63
160
BD135-16
BD137-16
BD139-16
MIN
MAX
100
250
250
VCE=5.0V, IC=50mA, f=100MHz
VCE=2.0V,
VCE=2.0V,
VCE=2.0V,
MHz
SYMBOL
hFE
TEST CONDITIONS
VCE=2.0V, IC=500mA
R3 (18-September 2009)