BD675 SERIES
NPN SILICON
POWER DARLINGTON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BD675 Series
types are NPN Silicon Darlington Power Transistors,
available in the plastic TO-126 package, and are
designed for audio and video output applications.
MARKING: FULL PART NUMBER
TO-126 CASE
BD675
MAXIMUM RATINGS:
(TC=25°C)
SYMBOL BD675A
Collector-Base Voltage
VCBO
45
Collector-Emitter Voltage
VCEO
45
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
ICEO
IEBO
BVCEO
BVCEO
BVCEO
BVCEO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(ON)
VBE(ON)
hFE
hFE
hfe
VEBO
IC
IB
PD
TJ, Tstg
Θ
JC
BD677
BD677A
60
60
BD679
BD679A
80
80
5.0
4.0
100
40
-65 to +150
3.13
MAX
200
2.0
500
2.0
45
60
80
100
120
2.5
2.8
2.5
2.5
750
750
1.0
BD681
100
100
BD683
120
120
UNITS
V
V
V
A
mA
W
°C
°C/W
UNITS
µA
mA
µA
mA
V
V
V
V
V
V
V
V
V
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=Rated VCBO
VCB=Rated VCBO, TC=100°C
VCE=�½Rated VCEO
VEB=5.0V
IC=50mA (BD675, BD675A)
IC=50mA (BD677, BD677A)
IC=50mA (BD679, BD679A)
IC=50mA (BD681)
IC=50mA (BD683)
IC=1.5A, IB=30mA (Non-A)
IC=2.0A, IB=40mA (A)
VCE=3.0V, IC=1.5A (Non-A)
VCE=3.0V, IC=2.0A (A)
VCE=3.0V, IC=1.5A (Non-A)
VCE=3.0V, IC=2.0A (A)
VCE=3.0V, IC=1.5A, f=1.0MHz
R1 (14-June 2010)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
