MCR716
MCR718
SURFACE MOUNT
SILICON CONTROLLED RECTIFIER
4 AMP, 400 THRU 600 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MCR716 and
MCR718 are epoxy molded Silicon Controlled
Rectifiers designed for sensing circuit applications and
control systems.
MARKING: FULL PART NUMBER
DPAK THYRISTOR CASE
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=85°C)
Peak non-Repetitive Surge Current
(1/2 cycle Sine wave, 50Hz/60Hz)
I
2
t Value for Fusing, t=10ms
Peak Gate Power, tp=1.0μs
Average Gate Power Dissipation
Peak Gate Current, tp=1.0μs
Critical Rate of Rise of On-State Current
Storage Temperature
Junction Temperature
VDRM, VRRM
IT(RMS)
ITSM
I
2
t
PGM
PG(AV)
IGM
di/dt
Tstg
TJ
MCR716
400
4.0
15
1.1
0.5
0.1
0.2
50
MCR718
600
UNITS
V
A
A
A
2
s
W
W
A
A/μs
°C
°C
-40 to +150
-40 to +125
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM, IRRM
IDRM, IRRM
IGT
IH
VGT
VTM
dv/dt
Rated VDRM, VRRM, RGK=1.0KΩ
Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C
VD=12V, RL=10Ω
IT=50mA, RGK=1.0KΩ
VD=12V, RL=10Ω
ITM=8.0A, tp=380μs
VD=
2
/
3
VDRM, RGK=1.0KΩ, TC=125°C
10
TYP
MAX
10
200
UNITS
μA
μA
μA
mA
V
V
V/μs
1.0
38
0.25
0.55
1.6
75
2.0
0.8
1.8
R1 (1-March 2010)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
