P6KE6.8A THRU P6KE440A
P6KE6.8CA THRU P6KE440CA
UNI-DIRECTIONAL
AND BI-DIRECTIONAL
SILICON TRANSIENT
VOLTAGE SUPPRESSORS
600 WATTS, 6.8 THRU 440 VOLTS
w w w. c e n t r a l s e m i . c o m
DO-15 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR P6KE6.8A (Uni-
Directional) and P6KE6.8CA (Bi-Directional) Series
types are Transient Voltage Suppressors designed to
protect voltage sensitive components from high voltage
transients.
THIS DEVICE IS MANUFACTURED WITH A GLASS
PASSIVATED CHIP FOR OPTIMUM RELIABILITY.
Note: For Uni-Directional devices add suffix “A” to part
number. For Bi-Directional devices add suffix “CA” to
part number.
MARKING: FULL PART NUMBER
Bi-directional devices shall not be
marked with a Cathode band.
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
Peak Power Dissipation (Note 1)
Steady State Power Dissipation (TL=75°C)
Forward Surge Current (Uni-Directional only)
Operating and Storage Junction Temperature
SYMBOL
PPK
PD
IFSM
TJ, Tstg
MAXIMUM
REVERSE
LEAKAGE
CURRENT
IR @ VRWM
µA
1000
500
200
50
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
600
5.0
100
-65 to +175
UNITS
W
W
A
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
BREAKDOWN
VOLTAGE
TYPE
MIN
V
P6KE6.8
P6KE7.5
P6KE8.2
P6KE9.1
P6KE10
P6KE11
P6KE12
P6KE13
P6KE15
P6KE16
P6KE18
P6KE20
P6KE22
P6KE24
P6KE27
P6KE30
P6KE33
P6KE36
P6KE39
P6KE43
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
VBR @ IT
NOM
V
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
TEST
CURRENT
IT
MAX
V
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41
45.2
mA
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
V
5.8
6.4
7.02
7.78
8.55
9.4
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
MAXIMUM
CLAMPING
VOLTAGE
VC @ IPP
V
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
PEAK
PULSE
CURRENT
(Note 1)
IPP
A
57
53
50
45
41
38
36
33
28
27
24
22
20
18
16
14.4
13.2
12
11.2
10.1
MAXIMUM
TEMPERATURE
COEFFICIENT
ΘV
BR
% / °C
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.097
0.098
0.099
0.100
0.101
Notes: (1) Non-repetitive 10x1,000µs pulse.
R1 (8-September 2011)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
