CLE234E
Very High Output Aluminum Gallium Arsenide
Quad chip IRED Array
0.130 (3.30) max
1.00 (25.4) min.
0.050 (1.27) max
®
Clairex
March, 2006
0.213 (5.41)
0.207 (5.26)
Technologies, Inc
.
0.100 (2.54) pin circle
ANODE
ANODE
0.169 (4.29)
0.163 (4.14)
(connected
to case)
CATHODE
CATHODE
0.010 (0.25) nom
0.019 (0.48)
0.016 (0.41)
0.147 (3.73)
0.137 (3.48)
Cathode leads must be externally connected together
Case 6
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
features
•
very wide emission angle
•
880nm wavelength
•
TO-46 header with epoxy dome
•
High power output
absolute maximum ratings
(T
A
= 25°C unless otherwise stated)
description
The CLE234E is an advanced, high
efficiency, high speed AlGaAs
infrared-emitting diode with four times
notes:
1. 0.06” (1.5mm) from the header for 5 seconds maximum.
the emitting surface of the typical
2. Derate linearly 4.0mA/°C from 25°C free air temperature to T
A
= +125°C.
AlGaAs emitter. High power output is
3. Derate linearly 4.0mW/°C from 25°C free air temperature to T
A
= +125°C.
achieved with four equally spaced
4. Operation at this level requires a proper heat sink.
cathode contacts for higher current
distribution. Cathode contacts are
bonded in pairs, each pair bonded to
a separate lead, which need to be
connected during operation. Chip
size is 0.030” by 0.030”. The TO-46
header provides reliable operation
over a wide temperature range.
storage temperature ...................................................................... -40°C to +125°C
operating temperature ................................................................... -40°C to +100°C
lead soldering temperature
(1)
......................................................................... 260°C
(2)(4)
..................................................................... 500mA
continuous forward current
peak forward current (1.0ms pulse width, 10% duty cycle) .................................. 4A
reverse voltage .................................................................................................... 5V
continuous power dissipation
(3)
.................................................................... 500mW
electrical characteristics
(T
A
= 25°C unless otherwise noted)
symbol
P
O
V
F
I
R
λ
p
BW
θ
HP
t
r,
t
f
parameter
Total power output
Forward voltage
Reverse current
Peak emission wavelength
Spectral bandwidth at half power
i t
Emission angle at half power points
Radiation rise and fall time
min
-
-
-
-
-
-
-
typ
8.0
1.65
-
880
45
100
700
max
-
1.8
10
-
-
-
-
units
mW
V
µA
nm
nm
deg.
ns
test conditions
I
F
= 100mA
I
F
= 100mA
V
R
= 5V
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
I
F(PK)
= 100mA, f = 1kHz, D.C. = 50%
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/15/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com