CLE336
850nm Super-Efficient AlGaAs Emitter
Narrow Radiation Pattern
0.156 (3.96)
0.136 (3.45)
1.00 (25.4) min.
®
Clairex
April, 2006
Technologies, Inc.
0.100 (2.54) dia.
0.215 (5.46)
0.205 (5.21)
CATHODE
0.165 (4.19)
0.145 (3.68)
0.190 (4.83)
0.176 (4.47)
(connected
to case)
ANODE
0.025 (0.64) max.
0.050 (1.27) nom
0.019 (0.48)
0.016 (0.41)
0.147 (3.73)
0.137 (3.48)
Case 7
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
features
•
150°C operating temperature
•
± 4.5° beam angle
•
exceptionally high power output
•
845nm wavelength
•
TO-46 hermetic package
•
cathode connected to case
•
RoHS compliant
description
The CLE336 is an advanced, high-
efficiency, high speed AlGaAs
infrared emitting diode. Output
power exceeds standard AlGaAs
emitters by 50%. A special lens
provides a sharply focused beam
pattern. The CLE336 is designed
for use anywhere a narrow beam
pattern and very high output are
required.
absolute maximum ratings
(T
A
= 25°C unless otherwise stated)
storage temperature....................................................................... -65°C to +150°C
operating temperature.................................................................... -65°C to +150°C
(1)
lead soldering temperature .......................................................................... 260°C
(2)
continuous forward current .........................................................................100mA
peak forward current (1.0ms pulse width, 10% duty cycle) ..................................1A
reverse voltage.....................................................................................................5V
continuous power dissipation
(3)
....................................................................200mW
notes:
1. 0.06” (1.5mm) from the header for 5 seconds maximum.
2. Derate linearly 0.64mA/°C free air temperature to T
A
= +150°C.
3. Derate linearly 1.28mW/°C free air temperature to T
A
= +150°C.
electrical characteristics
(T
A
= 25°C unless otherwise noted)
symbol
P
O
E
e
V
F
I
R
λ
P
BW
θ
HP
t
r
T
f
parameter
Total power output
Irradiance
(4)
Forward voltage
Reverse current
Peak emission wavelength
Spectral bandwidth at half power points
Emission angle at half power points
Radiation rise time
Radiation fall time
min
10
-
-
-
-
-
-
-
-
typ
20
3.5
1.7
-
845
40
9.0
11
7.0
max
-
-
1.9
10
-
-
-
-
-
units
mW
mW/cm
2
V
µA
nm
nm
deg.
ns
ns
test conditions
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
V
R
= 5V
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA, f = 1KHz, Duty
Cycle = 50%
Note:
4. E
e
is a measure of irradiance (power/unit area) within a 0.444" (1.128cm) diameter area, centered on the mechanical axis
of the device and spaced 2.54" (6.45cm) from the lens side of the tab. This is geometrically equivalent to a 10° cone.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 11/08/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com
CLAIREX [ CLAIREX TECHNOLOGIES, INC ]
