CLT135
NPN Silicon Phototransistor
0.210 (5.33)
0.190 (4.83)
0.500 (12.7) min
0.190 (4.83)
0.176 (4.47)
®
Clairex
0.215 (5.46)
0.205 (5.21)
Technologies, Inc
.
July, 2001
COLLECTOR
0.158 (4.01)
0.136 (3.45)
BASE
N/C
EMITTER
0.100 (2.54) dia
0.060 (1.52)
max
0.025 (0.64)
max
0.019 (0.48)
0.016 (0.41)
0.147 (3.73)
0.137 (3.48)
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
Case 17
features
absolute maximum ratings
(T
A
= 25°C unless otherwise stated)
storage temperature ...................................................................... -65°C to +150°C
•
high sensitivity
operating temperature ................................................................... -65°C to +125°C
•
± 9° acceptance angle
lead soldering temperature
(1)
......................................................................... 260°C
•
custom aspheric lensed TO-18
collector-emitter voltage..................................................................................... 30V
package
continuous collector current ............................................................................ 50mA
•
transistor base is not bonded
(2)
•
tested and characterized at 940nm continuous power dissipation .................................................................... 250mW
•
usable throughout visible and near
notes:
infrared spectrum
1. 0.06” (1.5mm) from the header for 5 seconds maximum
•
RoHS compliant
2. Derate linearly 2.0mW/°C from 25°C free air temperature to T
A
= +125°C.
description
The CLT135 is an NPN silicon
phototransistor mounted in a TO-18
package which features a custom
double convex glass-to-metal sealed
aspheric lens. Narrow acceptance
angle enables excellent on-axis
coupling. The CLT135 is spectrally
and mechanically matched to the
CLE135 IRED. For additional
information, call Clairex.
electrical characteristics
(T
A
= 25°C unless otherwise noted)
symbol
parameter
Light current
(3)
Collector dark current
Collector-emitter breakdown
Output rise and fall time
Total angle at half sensitivity points
min
typ
max
units
mA
nA
V
µs
deg.
test conditions
V
CE
= 5V, E
e
= 0.5mW/cm
2
V
CE
= 10V, E
e
= 0
I
C
= 100µA
I
C
= 1.0mA, V
CE
=5V, R
L
=100Ω.
I
L
I
CEO
V
(BR)CEO
t
r
, t
f
θ
HP
1.0
-
30
-
2.5
-
-
3.0
18
-
25
-
-
-
notes:
3.
Radiation source is an aluminum gallium arsenide IRED operating at a peak emission wavelength of 940nm
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/16/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com
CLAIREX [ CLAIREX TECHNOLOGIES, INC ]
