CLT335
NPN Silicon Phototransistor
0.210 (5.33)
0.190 (4.83)
0.500 (12.7) min
0.190 (4.83)
0.176 (4.47)
®
Clairex
0.215 (5.46)
0.205 (5.21)
Technologies, Inc
.
March, 2001
COLLECTOR
0.158 (4.01)
0.136 (3.45)
BASE
N/C
EMITTER
0.100 (2.54) dia
0.060 (1.52)
max
0.025 (0.64)
max
0.019 (0.48)
0.016 (0.41)
0.147 (3.73)
0.137 (3.48)
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
Case 17
features
absolute maximum ratings
(T
A
= 25°C unless otherwise stated)
storage temperature ....................................................................... -65°C to +150°C
•
±9° acceptance angle
operating temperature .................................................................... -65°C to +125°C
•
custom aspheric lensed TO-18
lead soldering temperature
(1)
.......................................................................... 260°C
package
collector-emitter voltage...................................................................................... 30V
•
transistor base is not bonded
•
tested and characterized at 850nm continuous collector current ............................................................................. 50mA
continuous power dissipation
(2)
..................................................................... 250mW
•
RoHS compliant
notes:
description
1. 0.06” (1.5mm) from the header for 5 seconds maximum
The CLT335 is a silicon NPN
2. Derate linearly 2.0mW/°C from 25°C free air temperature to T
A
= +125°C.
phototransistor mounted in a TO-18
package which features a custom
double convex glass-to-metal
sealed aspheric lens. Narrow
acceptance angle enables excellent
on-axis coupling. The CLT335 is
mechanically and spectrally matched
to Clairex's CLE335 LED. For
additional information, call Clairex.
electrical characteristics
(T
A
= 25°C unless otherwise noted)
symbol
parameter
min
typ
max
units
test conditions
I
L
I
CEO
V
(BR)CEO
t
r
, t
f
θ
HP
notes:
Light current
(3)
Collector dark current
Collector-emitter breakdown
Output rise and fall time
Total angle at half sensitivity points
1.0
-
30
-
-
2.5
-
-
5.0
18
-
25
-
-
-
mA
nA
V
µs
deg.
V
CE
=5V, E
e
=0.5mW/cm
2
V
CE
=10V, E
e
=0
I
C
=100µA
I
C
= 1mA, V
CE
=5V, R
L
=1kΩ.
3. Radiation source is an aluminum gallium arsenide IRED operating at a peak emission wavelength of 850nm.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/16/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com
CLAIREX [ CLAIREX TECHNOLOGIES, INC ]
