SMD Schottky Barrier Diode
COMCHIP
www.comchip.com.tw
CDBU0130
Io = 100 mA
V
R
= 30 Volt s
Features
(Lead-free Device)
Designed for mounting on small surface.
Extremely thin/leadless package.
Low drop-down voltage.
Majority carrier conduction.
0.039(1.00)
0.031(0.80)
0603(1608)
0.071(1.80)
0.063(1.60)
Mechanical data
Case:
0603 (1608) Standard package ,
molded plastic.
0.010(0.25) Typ.
0.033 (0.85)
0.027 (0.70)
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
0.012 (0.30) Typ.
Mounting position: Any.
0.014(0.35) Typ.
Weight: 0.003 gram (approximately).
Dimensions in inches and (millimeter)
Maximum Rating
( at T
A
= 25 C unless otherwise noted )
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current , surge peak
Power Dissipation
Storage temperature
Junction temperature
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
Io
I
FSM
P
D
T
STG
Tj
-40
-40
1000
150
+125
+125
35
30
100
V
V
mA
mA
mW
C
C
Electrical Characteristics
( at T
A
= 25 C unless otherwise noted )
Parameter
Forward voltage
Reverse current
Capacitance between terminals
V
R
= 30 V
f = 1MHz, and 10 VDC reverse voltage
Conditions
I
F
= 100 mA DC
Symbol Min Typ Max Unit
V
F
I
R
C
T
9
0.44
30
V
uA
pF
RDS0301006-B