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RB751V-40 参数 Datasheet PDF下载

RB751V-40图片预览
型号: RB751V-40
PDF下载: 下载PDF文件 查看货源
内容描述: SMD肖特基势垒二极管 [SMD Schottky Barrier Diodes]
分类和应用: 二极管光电二极管
文件页数/大小: 4 页 / 95 K
品牌: COMCHIP [ COMCHIP TECHNOLOGY ]
 浏览型号RB751V-40的Datasheet PDF文件第2页浏览型号RB751V-40的Datasheet PDF文件第3页浏览型号RB751V-40的Datasheet PDF文件第4页  
SMD Schottky Barrier Diodes
RB751V-40
Io = 30 mA
V
R
= 30 Volts
RoHS Device
SOD-323
Features
-Low current rectifier.
-Low voltage, low inductance.
-For power supply.
0.014 ( 0.35 )
0.010(0.25)
0.055 ( 1.40 )
0.047(1.20)
0.071 ( 1.80 )
0.063(1.60)
Mechanical data
-Case: SOD-323 Standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750D, method 2026.
-Mounting position: Any.
0.106 ( 2.70 )
0.098(2.50)
0.039 (1.00)Max.
0)
0.004 (0.10)Max.
0)
0.006 ( 0.15 )Max.
0.019 ( 0.475 )REF
Dimensions in inches and (millimeter)
Maximum Ratings
(at T =25°C unless otherwise noted)
A
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current,surge peak
Storage temperature
Junction temperature
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
I
O
40
30
30
0.2
-40
+125
+125
V
V
mA
A
°C
°C
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
I
FSM
T
STG
T
j
Electrical Characteristics
(At Ta=25°C, unless otherwise noted)
Parameter
Forward voltage
Reverse current
Junction capacitance
I
F
= 1 mA
V
R
= 30 V
V
R
= 1V,f=1MHz
Conditions
Symbol Min Typ Max Unit
V
F
I
R
C
T
2
0.37
0.5
V
uA
pF
REV:A
QW-BB029
Page 1
Comchip Technology CO., LTD.