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2N1595 参数 Datasheet PDF下载

2N1595图片预览
型号: 2N1595
PDF下载: 下载PDF文件 查看货源
内容描述: 硅晶闸管 [SILICON THYRISTOR]
分类和应用: 栅极
文件页数/大小: 2 页 / 98 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号2N1595的Datasheet PDF文件第1页  
2N1595 thru 2N1599
Symbol
I
DRM
I
GT
Ratings
Peak Forward Blocking Current
(Rated
V
DRM
with gate open
,
T
J
=125°C)
Gate Trigger Current (2)
Anode Voltage=7.0 Vdc,
R
L
=12Ω
Gate Trigger Voltage
Anode Voltage=7.0 Vdc,
R
L
=12Ω
V
DRM
= Rated,
R
L
=100Ω,
T
J
=125°C
2N1595
2N1596
2N1597
2N1598
2N1599
Max :1.0
Typ : 2.0
Max : 10
Typ : 0.7
Max : 3.0
Min : 0.2
Typ : 5.0
Typ : 1.1
Max : 2.0
Typ : 0.8
mA
mA
V
GT
V
mA
V
µs
µs
I
H
V
TM
t
gt
Holding Current
Anode Voltage=7.0 Vdc, gate open
Forward On Voltage
I
T
=1 Adc
Turn-On Time (t
d
+t
r
)
I
GT
=10 mA,
I
T
=1 A
Turn-Off Time
I
T
=1 A,
I
R
=1 A, dv/dt=20 V/
µs,
T
J
=125°C
V
DRM
= Rated Voltage
t
q
Typ : 10
* V
DRM
or
V
RSM
can be applied for all types on a continuous dc basis without incurring damage.
MECHANICAL DATA CASE TO-39
DIMENSIONS
A
B
C
D
E
F
G
H
L
Pin 1 :
Pin 2 :
Pin 3 :
mm inches
6,25
0,24
13,59
0,53
9,24
0,36
8,24
0,32
0,78
0,03
1,05 0,041
0,42 0,165
45°
5,1
0,2
Cathode
Gate
Anode
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
2/2