NPN 2N1613 – 2N1711
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector
connected to the case .
They are designed for use in high-performance amplifier, oscillator and switching circuits.
The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CER
V
EBO
I
C
I
CM
P
D
T
J
T
Stg
Ratings
Collector-Base Voltage
Collector-Emitter Voltage (R
BE
= 10Ω)
Emitter-Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature range
@ T
case
= 25°
@ T
case
= 100°
@ T
amb
= 25°
Value
75
50
7
0.5
1
3
1.7
0.8
200
-65 to +200
Unit
V
V
V
A
A
Watts
Watts
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-c
R
thJ-amb
Ratings
Thermal Resistance, Junction-case
Thermal Resistance, Junction-ambient
Value
58
219
Unit
°C/ W
°C/ W
COMSET SEMICONDUCTORS
1/3
COMSET [ COMSET SEMICONDUCTOR ]
