2n2322 to 2n2326
ELECTRICAL CHARACTERISTICS
(*)
T
J
=25°C unless otherwise noted, R
GK
=1000Ω
Symbol
V
DRM
I
RRM
Ratings
Peak Forward Blocking
Min :
Voltage (1)
Peak Reverse Blocking
Current
(Rated V
DRM,
T
J
=125°C)
Peak Forward Blocking
Current
(Rated V
DRM,
T
J
=125°C)
Forward « on » Voltage
I
TM
=1.0 A Peak
I
TM
=3.14 A Peak
T
C
=85°C
Gate Trigger Current (2)
Anode Voltage=6.0 Vdc
R
L
=100Ω
Anode Voltage=6.0 Vdc
R
L
=100Ω, T
C
=-65°C
Gate Trigger Voltage
Anode Voltage=6.0 V
R
L
=100Ω
Anode Voltage=6.0 V
R
L
=100Ω, T
C
=-65°C
V
DRM
= Rated
R
L
=100Ω, T
J
=125°C
Holding Current
Anode Voltage=6.0 V
Anode Voltage=6.0 V
T
C
=-65°C
Anode Voltage=6.0 V
T
C
=125°C
2N2322 2N2323 2N2324 2N2325 2N2326 Unit
25
50
100
Max : 100
150
200
V
µA
µA
I
DRM
Max : 100
Max : 1.5
V
TM
V
Max : 2.0
Max : 200
µA
Max : 350
I
GT
Max : 0.8
Max : 1.0
Min : 0.1
Max : 2.0
Max : 3.0
Min : 0.15
mA
V
V
GT
I
H
(*) JEDEC Registered Values
(1) V
RSM
and V
DRM
can be applied for all types on a continuous dc basis without incurring
damage.
(2) R
GK
current is not included in measurement.
12/11/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
