NPN 2N3866
Symbol
f
T
C
CBO
P
O (**)
η
(**)
Ratings
Transition Frequency
Collector-Base Capacitance
Output Power
Collector Efficiency
Test Condition(s)
Min
500
-
1
45
Typ
-
-
-
-
Max
-
3
-
-
Unit
MHz
pF
pF
ps
I
C
=50 mA, V
CE
=15 V
f= 200MHz
I
E
= 0 ,V
CB
= -28 V
f = 1MHz
V
CC
= -28V
P
i
=100 mW
f = 400 MHz
V
CC
= -28V ,P
o
=1 W
f = 400 MHz
(*) Pulse conditions : tp < 300
µs, δ
=1%.
(**) See test circuit.
MECHANICAL DATA CASE TO-39
DIMENSIONS
A
B
C
D
E
F
G
H
L
mm
6,25
13,59
9,24
8,24
0,78
1,05
0,42
45°
4,1
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Emitter
Base
Collector
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
11/09/2012
COMSET SEMICONDUCTORS
info@comsetsemi.com
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