2N5320 参数 Datasheet PDF下载

NPN 2N5320 – 2N5321

SILICON PLANAR EPITAXIAL TRANSISTORS

The 2N5320 and 2N5321 are NPN transistors mounted in TO-39 metal case .

They are especially intended for high-voltage medium power applications in industrial and commercial

equipements.

Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS

Symbol

V

CEO

V

CBO

V

CEV

V

EBO

I

C

I

B

P

D

Ratings

Collector-Emitter Voltage (I

B

= 0)

Collector-Base Voltage (I

E

= 0)

Collector-Emitter Voltage (V

BE

= 1.5V)

Emitter-Base Voltage (I

C

= 0)

Collector Current

Base Current

@ T

amb

= 25°

Total Power Dissipation

@ T

case

= 25°

2N5320

2N5321

2N5320

2N5321

2N5320

2N5321

2N5320

2N5321

2N5320

2N5321

2N5320

2N5321

2N5320

2N5321

2N5320

2N5321

2N5320

2N5321

2N5320

2N5321

Value

75

50

100

75

100

75

6

5

2

1

1

Unit

V

V

V

V

A

A

Watts

10

-65 to +200

-65 to +200

°C

°C

T

J

T

Stg

Junction Temperature

Storage Temperature range

THERMAL CHARACTERISTICS

Symbol

R

thJ-a

R

thJ-c

Ratings

Thermal Resistance, Junction to ambient

Thermal Resistance, Junction to case

2N5320

2N5321

2N5320

2N5321

Value

175

17.5

Unit

°C/W

°C/W

COMSET SEMICONDUCTORS

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