NPN BD136 – BD138 – BD140
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I
E
=0, -V
CB
= 30 V
BD135
BD137
BD139
BD135
BD137
BD139
BD135
BD137
BD139
Min
-
-
-
-
-
-
-
45
60
80
-
25
40
63
100
25
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
75
Max
0,1
0,1
0,1
10
10
10
10
-
-
-
0,5
-
250
160
250
-
1
-
Unit
-I
CBO
Collector cut-off current
I
E
=0, -V
CB
= 30V
T
j
= 125°C
µA
-I
EBO
-V
CEO(SUS)
-V
CE(SAT)
Emitter cut-offcurrent
Collector-Emitter
sustaning Voltage (*)
Collector-Emitter
saturation Voltage (*)
I
C
=0, -V
EB
=5 V
I
B
=0, -I
C
=30 mA
µA
V
V
-I
C
=0.5 A, -I
B
=50 mA
-V
CE
=2 V, -I
C
=5 mA
BDxxx
-V
CE
=2 V
BDxxx -10
-I
C
=150 mA
BDxxx -16
-V
CE
=2 V, -I
C
=500 mA
-V
CE
=2 V, -I
C
=500 mA
-V
CE
=5 V, -I
C
=50 mA
f= 35 MHz
h
FE
DC Current Gain (*)
-V
BE
f
T
Base-Emitter Voltage(*)
Transition frequency
V
MHz
(*)
Measured under pulse conditions :
t
P
<300µs,
δ
<2%.
15/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
