SEMICONDUCTORS
MSS40 / MSS50 Series
ABSOLUTE MAXIMUM RATINGS
Value
Symbol
Ratings
MSS40
I
T(RMS)
I
TSM
I
2
t
Dl/dt
I
GM
P
G(AV)
T
j
T
stg
V
RGM
RMS on-state current
t
p
= 16.7ms
Non repetitive surge
peak on-state current
t
p
= 20ms
2
I t Value for fusing
t
p
= 10ms
Critical rate of rise of on-
state current
F = 120Hz
I
G
= 2xI
GT
, tr
≤
100ns
Peak gate current
t
p
= 20µs
Average gate power dissipation
Operating junction temperature range
Storage junction temperature range
Maximum peak reverse gate voltage
T
C
= 80 °C
T
C
= 85 °C
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
55
-
420
400
800
50
4
1
-40 to +125
-40 to +150
5
Unit
MSS50
-
70
630
600
1800
A
A
A
2
s
A/µs
A
W
°C
V
THERMAL CHARACTERISTICS
Symbol
R
th(j-c)
Ratings
MSS40
Junction to case (AC)
MSS50
Value
0.6
Unit
°C/W
0.45
29/10/2012
COMSET SEMICONDUCTORS
2|4
COMSET [ COMSET SEMICONDUCTOR ]
