V
DS
1200 V
31.6 A
80 mΩ
C2M0080120D
Silicon Carbide Power MOSFET
TM
Z-FET MOSFET
N-Channel Enhancement Mode
Features
Package
I
D
@
25˚C
R
DS(on)
•
•
•
•
•
•
High Speed Switching with Low Capacitances
High Blocking Voltage with Low R
DS(on)
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Resistant to Latch-Up
Halogen Free, RoHS Compliant
TO-247-3
Benefits
•
•
•
Higher System Efficiency
Reduced Cooling Requirements
Increased System Switching Frequency
Applications
•
•
•
•
•
Solar Inverters
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
UPS
Part Number
C2M0080120D
Package
TO-247-3
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Continuous Drain Current
Value
31.6
20
80
-10/+25
208
-55 to
+150
260
1
8.8
Unit
A
Test Conditions
V
GS
@20 V, T
C
= 25˚C
V
GS
@20 V, T
C
= 100˚C
Note
Fig. 16
I
DS (DC)
I
DS (pulse)
Pulsed Drain Current
V
GS
P
tot
T
J
, T
stg
T
L
M
d
Gate Source Voltage
Power Dissipation
Operating Junction and Storage Temperature
Solder Temperature
Mounting Torque
A
V
W
˚C
˚C
Pulse width t
P
= 50
μs
duty
limited by T
jmax,
T
C
= 25˚C
T
C
=25˚C
Fig. 15
1.6mm (0.063”) from case for 10s
Nm
M3 or 6-32 screw
lbf-in
1
C2M0080120D Rev. A
CREE [ CREE, INC ]
