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CY62146EV30LL-45ZSXI 参数 Datasheet PDF下载

CY62146EV30LL-45ZSXI图片预览
型号: CY62146EV30LL-45ZSXI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 256K ×16 )静态RAM [4-Mbit (256K x 16) Static RAM]
分类和应用:
文件页数/大小: 13 页 / 444 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY62146EV30 MoBL
®
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Figure 3. AC Test Loads and Waveforms
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
R2
R1
V
CC
10%
GND
Rise Time = 1 V/ns
ALL INPUT PULSES
90%
90%
10%
Fall Time = 1 V/ns
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
VFBGA
75
10
TSOP II
77
13
Unit
°C/W
°C/W
Θ
JA
Θ
JC
Equivalent to: THEVENIN EQUIVALENT
OUTPUT
R
TH
V
3.0V
1103
1554
645
1.75
Unit
Ω
Ω
Ω
V
Parameters
R1
R2
R
TH
V
TH
2.50V
16667
15385
8000
1.20
Data Retention Characteristics
Over the Operating Range
Parameter
V
DR
I
CCDR [7]
t
CDR [8]
t
R [9]
Description
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Figure 4. Data Retention Waveform
DATA RETENTION MODE
V
CC
CE
Conditions
V
CC
= 1.5V, CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
Industrial/Auto-A
Min
1.5
Typ
0.8
Max
7
Unit
V
μA
ns
ns
0
t
RC
V
CC(min)
t
CDR
V
DR
> 1.5V
V
CC(min)
t
R
Notes
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100
μs
or stable at V
CC(min)
> 100
μs.
Document Number: 38-05567 Rev. *D
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