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CY7C1049B-20VI 参数 Datasheet PDF下载

CY7C1049B-20VI图片预览
型号: CY7C1049B-20VI
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8静态RAM [512K x 8 Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 10 页 / 135 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1049B
Switching Waveforms
(continued)
Write Cycle No. 1 (CE Controlled)
[15, 16]
t
WC
ADDRESS
t
SCE
CE
t
SA
t
SCE
t
AW
t
PWE
WE
t
SD
DATA I/O
DATA VALID
t
HD
t
HA
Write Cycle No. 2 (WE Controlled, OE HIGH During Write)
[15, 16]
t
WC
ADDRESS
t
SCE
CE
t
AW
t
SA
WE
t
PWE
t
HA
OE
t
SD
DATA I/O
NOTE 17
t
HZOE
Notes:
15. Data I/O is high impedance if OE = V
IH
.
16. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
17. During this period the I/Os are in the output state and input signals should not be applied.
t
HD
DATA
IN
VALID
Document #: 38-05169 Rev. *A
Page 7 of 10