CY7C199
Electrical Characteristics
Over the Operating Range (-20, -25, -35, -45) (continued)
[3]
7C199-20
Parameter
I
SB1
Description
Automatic CE
Power-down Current—
TTL Inputs
Automatic CE
Power-down Current—
CMOS Inputs
Test Conditions
Max. V
CC
, CE > V
IH
, Com’l
V
IN
> V
IH
or V
IN
< V
IL
, L
f = f
MAX
Max. V
CC
,
Com’l
CE > V
CC
– 0.3V
L
V
IN
> V
CC
– 0.3V or
Mil
V
IN
< 0.3V, f=0
30
5
10
0.05
15
7C199-25
30
5
10
0.05
15
7C199-35
25
5
10
0.05
15
7C199-45
Min.
Max. Unit
25
5
10
0.05
15
mA
mA
mA
µA
mA
Min. Max. Min. Max. Min. Max.
I
SB2
Capacitance
[4 ]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
Max.
8
8
Unit
pF
pF
AC Test Loads and Waveforms
[5]
R1 481
Ω
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Equivalent to:
R2
255
Ω
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
167
Ω
OUTPUT
1.73V
R2
255
Ω
3.0V
10%
GND
R1 481
Ω
ALL INPUT PULSES
90%
90%
10%
≤
t
r
≤
t
r
(a)
(b)
THÉVENIN EQUIVALENT
Data Retention Characteristics
Over the Operating Range (L-version only)
Parameter
V
DR
I
CCDR
t
CDR[4]
t
R [5]
Description
V
CC
for Data Retention
Data Retention Current
Com’l
Com’l L
Chip Deselect to Data Retention Time
Operation Recovery Time
V
CC
= V
DR
= 2.0V, CE > V
CC
–
0.3V, V
IN
> V
CC
– 0.3V or V
IN
<
0.3V
0
200
Conditions
[6]
Min.
2.0
Max.
Unit
V
µA
10
µA
ns
µs
Data Retention Waveform
DATA RETENTION MODE
V
CC
3.0V
t
CDR
CE
Note:
4. Tested initially and after any design or process changes that may affect these parameters.
5. t
R
< 3 ns for the -12 and the -15 speeds. t
R
< 5 ns for the -20 and slower speeds
6. No input may exceed V
CC
+ 0.5V.
V
DR
> 2V
3.0V
t
R
Document #: 38-05160 Rev. *A
Page 3 of 13
CYPRESS [ CYPRESS SEMICONDUCTOR ]
