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CY7C1354C-166AXC 参数 Datasheet PDF下载

CY7C1354C-166AXC图片预览
型号: CY7C1354C-166AXC
PDF下载: 下载PDF文件 查看货源
内容描述: 9兆位( 256千×五百十二分之三十六K&times 18 )流水线SRAM与NOBL ™架构 [9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM with NoBL? Architecture]
分类和应用: 存储内存集成电路静态存储器时钟
文件页数/大小: 32 页 / 1078 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1354C, CY7C1356C
9-Mbit (256 K × 36/512 K × 18)
Pipelined SRAM with NoBL™ Architecture
9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM with NoBL™ Architecture
Features
Functional Description
The CY7C1354C and CY7C1356C
are 3.3 V, 256 K x 36 and
512K x 18 synchronous pipelined burst SRAMs with No Bus
Latency™ (NoBL logic, respectively. They are designed to
support unlimited true back-to-back read/write operations with
no wait states. The CY7C1354C and CY7C1356C are
equipped with the advanced (NoBL) logic required to enable
consecutive read/write operations with data being transferred
on every clock cycle. This feature greatly improves the
throughput of data in systems that require frequent write/read
transitions. The CY7C1354C and CY7C1356C are pin
compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the clock enable (CEN) signal, which
when deasserted suspends operation and extends the
previous clock cycle.
Write operations are controlled by the byte write selects
(BW
a
–BW
d
for CY7C1354C and BW
a
–BW
b
for CY7C1356C)
and a write enable (WE) input. All writes are conducted with
on-chip synchronous self-timed write circuitry.
Three synchronous chip enables (CE
1
, CE
2
, CE
3
) and an
asynchronous output enable (OE) provide for easy bank
selection and output tristate control. To avoid bus contention,
the output drivers are synchronously tristated during the data
portion of a write sequence.
Pin-compatible and functionally equivalent to ZBT
Supports 250 MHz bus operations with zero wait states
Available speed grades are 250, 200, and 166 MHz
Internally self-timed output buffer control to eliminate the
need to use asynchronous OE
Fully registered (inputs and outputs) for pipelined
operation
Byte write capability
Single 3.3 V power supply (V
DD
)
3.3 V or 2.5 V I/O power supply (V
DDQ
)
Fast clock-to-output times
2.8 ns (for 250 MHz device)
Clock enable (CEN) pin to suspend operation
Synchronous self-timed writes
Available in Pb-free 100-pin TQFP package, Pb-free, and
non Pb-free 119-ball BGA package and 165-ball FBGA
package
IEEE 1149.1 JTAG-compatible boundary scan
Burst capability – linear or interleaved burst order
“ZZ” sleep mode option and stop clock option
Logic Block Diagram – CY7C1354C (256 K × 36)
A0, A1, A
MODE
CLK
CEN
ADDRESS
REGISTER 0
A1
A1'
D1
Q1
A0
A0'
BURST
D0
Q0
LOGIC
ADV/LD
C
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
C
ADV/LD
BW
a
BW
b
BW
c
BW
d
WE
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
E
DQ s
DQ P
a
DQ P
b
DQ P
c
DQ P
d
E
INPUT
REGISTER 1
E
INPUT
REGISTER 0
E
OE
CE1
CE2
CE3
ZZ
READ LOGIC
SLEEP
CONTROL
Note
1. For best-practices recommendations, refer to the Cypress application note
System Design Guidelines
www.cypress.com.
Cypress Semiconductor Corporation
Document Number: 38-05538 Rev. *K
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised March 2, 2011