CYStech Electronics Corp.
Electrical Characteristics
(T
A
=25°C)
Parameters
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Cutoff Frequency
Noise Figure
Insertion Gain |S
21e
|
2
in 50Ω system
Output Capacitance
Conditions
V
CB
=3V, I
E
=0
V
EB
=1V
V
CE
=2V, I
C
=7mA
(Note 1)
V
CE
=2V, I
C
=7mA, f =2GHz
V
CE
=1V, I
C
=5mA, f =2GHz
V
CE
=2V, I
C
=3mA, f =2GHz
V
CE
=1V, I
C
=3mA, f =2GHz
V
CE
=2V, I
C
=7mA, f =2GHz
V
CE
=1V, I
C
=5mA, f =2GHz
V
CB
=2V, IE=0, f = 1MHz
Symbol
I
CBO
I
EBO
h
FE
f
T
NF
|S
21e
|
2
Cob
Min
-
-
70
-
-
-
-
10
8.5
-
Spec. No. : C213WC3
Issued Date : 2003.08.15
Revised Date :
Page No. : 2/3
Typ.
-
-
-
12
10
1.5
1.5
12
11
0.7
Max
100
100
140
15.5
13
2.0
2.0
-
-
1.0
Unit
nA
nA
-
GHz
GHz
dB
dB
dB
dB
pF
Note 1: Pulse test: Pulse width≤ 380µs, duty cycle≤ 2%.
BTC5181WC3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
