CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25℃, unless otherwise specified)
Spec. No. : C335N3
Issued Date : 2003.05.30
Revised Date :
Page No. : 2/4
•
Maximum Temperatures
Storage Temperature Tstg ................................................................................................... -65~+150
°C
Junction Temperature Tj ............................................................................................................. +150
°C
•
Maximum Power Dissipation
Total Power Dissipation Ptot
(Note)
........................................................................................... 350 mW
•
Maximum Voltages and Currents
Repetitive Peak Reverse Voltage V
RRM
............................................................................................ 300 V
DC Blocking Voltage V
R
………………………………………………………………………….. 240V
RMS Reverse Voltage V
R
(
RMS)
…………………………………………………………………….. 170V
Continuous Forward Current I
F
(Note)
…………………………………………………………… 225 mA
Peak Repetitive Forward Current I
FRM
(Note)
………..………………………………………….625 mA.
Surge Non-repetitive Forward Current I
FSM
@ tp=1µs ........................................................................ 4A
@ tp=1s…….…………………………………………. 1A
•
Thermal Resistance, Junction to Ambient Air R
θJA
……………………………………….……357℃/W
Note : Parts mounted on FR-4 board. For double diodes, Ptot is the total power dissipation of both diodes.
Characteristics
(Ta=25°C)
Characteristic
Reverse Breakdown Voltage
Forward Voltage
(Note)
Symbol
V
BR
V
F
(1)
V
F
(2)
I
R
(1)
I
R
(2)
C
D
t
rr
Condition
I
R
=100µA
I
F
=20mA
I
F
=100mA
V
R
=240V,Tj=25℃
V
R
=240V,Tj=150℃
V
R
=0V, f=1MHz
I
F
=I
R
=30mA RL=100Ω
measured at IR=3mA
Min.
300
-
-
-
-
-
Max.
-
870
1000
100
100
5
50
Unit
V
mV
mV
nA
µA
pF
ns
Reverse Leakage Current
(Note)
Diode Capacitance
Reverse Recovery Time
Notes
:
Pulse test, tp=380µs, duty cycle<2%.
CMBD2004/A/C/SN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
